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Philips Semiconductors
Product specification
Rectifier diodes ultrafast, rugged
FEATURES
* Low forward volt drop * Fast switching * Soft recovery characteristic * Reverse surge capability * High thermal cycling performance * Isolated mounting tab
BYQ28F, BYQ28EX series
SYMBOL
QUICK REFERENCE DATA VR = 150 V/ 200 V
a1 1 k2
a2 3
VF 0.895 V IO(AV) = 10 A IRRM = 0.2 A trr 25 ns
GENERAL DESCRIPTION
Dual, ultra-fast, epitaxial rectifier diodes intended for use as output rectifiers in high frequency switched mode power supplies. The BYQ28F series is supplied in the SOT186 package. The BYQ28EX series is supplied in the SOT186A package.
PINNING
PIN 1 2 3 tab DESCRIPTION anode 1 (a) cathode (k) anode 2 (a) isolated
SOT186
case
SOT186A
case
123
123
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VRRM VRWM VR IO(AV) IFRM IFSM PARAMETER Peak repetitive reverse voltage Crest working reverse voltage Continuous reverse voltage Average rectified output current (both diodes conducting)1 Repetitive peak forward current per diode Non-repetitive peak forward current per diode CONDITIONS BYQ28F / BYQ28EX Ths 148C -40 MIN. -150 150 150 150 10 10 50 55 0.2 0.2 150 150 MAX. -200 200 200 200 UNIT V V V A A A A A A C C
IRRM IRSM Tstg Tj
square wave = 0.5; Ths 92 C t = 25 s; = 0.5; Ths 92 C t = 10 ms t = 8.3 ms sinusoidal; with reapplied VRWM(max) Repetitive peak reverse current tp = 2 s; = 0.001 per diode Non-repetitive peak reverse tp = 100 s current per diode Storage temperature Operating junction temperature
1 Neglecting switching and reverse current losses October 1998 1 Rev 1.300
Philips Semiconductors
Product specification
Rectifier diodes ultrafast, rugged
ESD LIMITING VALUE
SYMBOL VC PARAMETER Electrostatic discharge capacitor voltage CONDITIONS Human body model; C = 250 pF; R = 1.5 k
BYQ28F, BYQ28EX series
MIN. -
MAX. 8
UNIT kV
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 C unless otherwise specified SYMBOL PARAMETER Visol Peak isolation voltage from all terminals to external heatsink CONDITIONS SOT186 package; R.H. 65%; clean and dustfree MIN. TYP. MAX. UNIT 1500 V
Visol
R.M.S. isolation voltage from SOT186A package; f = 50-60 Hz; all terminals to external sinusoidal waveform; R.H. 65%; clean heatsink and dustfree Capacitance from pin 2 to external heatsink f = 1 MHz
-
-
2500
V
Cisol
-
10
-
pF
THERMAL RESISTANCES
SYMBOL Rth j-hs Rth j-a PARAMETER Thermal resistance junction to heatsink Thermal resistance junction to ambient CONDITIONS with heatsink compound without heatsink compound in free air MIN. TYP. 55 MAX. 5.7 6.7 UNIT K/W K/W K/W
ELECTRICAL CHARACTERISTICS
characteristics are per diode at Tj = 25 C unless otherwise stated SYMBOL VF IR Qs trr1 trr2 Irrm Vfr PARAMETER Forward voltage Reverse current Reverse recovery charge Reverse recovery time Reverse recovery time Peak reverse recovery current Forward recovery voltage CONDITIONS IF = 5 A; Tj = 150C IF = 5 A IF = 10 A VR = VRWM; Tj = 100 C VR = VRWM IF = 2 A; VR 30 V; -dIF/dt = 20 A/s IF = 1 A; VR 30 V; -dIF/dt = 100 A/s IF = 0.5 A to IR = 1 A; Irec = 0.25 A IF = 5 A; VR 30 V; -dIF/dt = 50 A/s IF = 1 A; dIF/dt = 10 A/s MIN. TYP. 0.80 0.95 1.10 0.1 2 4 15 10 0.5 1 MAX. 0.895 1.10 1.25 0.2 10 9 25 20 0.7 UNIT V V V mA A nC ns ns A V
October 1998
2
Rev 1.300
Philips Semiconductors
Product specification
Rectifier diodes ultrafast, rugged
BYQ28F, BYQ28EX series
I
dI F dt
F
0.5A IF
t
rr time
0A I rec = 0.25A IR trr2
Q I R I
s
10%
100%
rrm
I = 1A R
Fig.1. Definition of trr1, Qs and Irrm
Fig.4. Definition of trr2
I
F
8 7 6 5
PF / W
Vo = 0.748 V Rs = 0.0293 Ohms
BYQ28
Ths(max) / C D = 1.0
104.4 110.1 115.8
0.5 0.2 0.1
121.5 127.2 132.9
time VF V VF time fr
4 3 2 1
I
tp
D=
tp T t
138.6 144.3 150 8
T
0
0
1
2
3
4 IF(AV) / A
5
6
7
Fig.2. Definition of Vfr
Fig.5. Maximum forward dissipation PF = f(IF(AV)) per diode; square current waveform where IF(AV) =IF(RMS) x D.
PF / W
Vo = 0.748 V Rs = 0.0293 Ohms
R
6 5
BYQ28
Ths(max) / C
115.8 121.5 127.2 132.9 138.6 144.3 150 6
a = 1.57 1.9 2.2 2.8 4
D.U.T. Voltage Pulse Source
4 3 2
Current shunt
to 'scope
1 0
0
1
2
3 IF(AV) / A
4
5
Fig.3. Circuit schematic for trr2
Fig.6. Maximum forward dissipation PF = f(IF(AV)) per diode; sinusoidal current waveform where a = form factor = IF(RMS) / IF(AV).
October 1998
3
Rev 1.300
Philips Semiconductors
Product specification
Rectifier diodes ultrafast, rugged
BYQ28F, BYQ28EX series
1000
trr / ns
100
Qs / nC
IF=5A IF=2A IF=1A
100
IF=5A
10
IF=1A 10
1.0
1
1
10 dIF/dt (A/us)
100
0.1
1.0
10 -dIF/dt (A/us)
100
Fig.7. Maximum trr at Tj = 25 C; per diode
Fig.10. Maximum Qs at Tj = 25 C; per diode
10
Irrm / A
10
Transient thermal impedance, Zth j-hs (K/W)
1
1 IF=5A
0.1
0.1
IF=1A
0.01
P D tp D= tp T t
0.01 1 10 -dIF/dt (A/us) 100
0.001 1us
T
10us
100us 1ms 10ms 100ms 1s 10s pulse width, tp (s) BYQ28F/EX
Fig.8. Maximum Irrm at Tj = 25 C; per diode
Fig.11. Transient thermal impedance; per diode; Zth j-hs = f(tp).
15
IF / A Tj=150C Tj=25C
BYQ28
10
5 typ max
0 0 0.5 VF / V 1 1.5
Fig.9. Typical and maximum forward characteristic IF = f(VF); parameter Tj
October 1998
4
Rev 1.300
Philips Semiconductors
Product specification
Rectifier diodes ultrafast, rugged
MECHANICAL DATA
Dimensions in mm Net Mass: 2 g
BYQ28F, BYQ28EX series
10.2 max 5.7 max 3.2 3.0
0.9 0.5
4.4 max 2.9 max 4.4 4.0
7.9 7.5 17 max
seating plane
3.5 max not tinned
4.4
13.5 min 1 0.4 M 2 3 0.9 0.7 2.54 5.08 top view 1.3
0.55 max
Fig.12. SOT186; The seating plane is electrically isolated from all terminals.
Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8".
October 1998
5
Rev 1.300
Philips Semiconductors
Product specification
Rectifier diodes ultrafast, rugged
MECHANICAL DATA
Dimensions in mm Net Mass: 2 g
10.3 max 3.2 3.0
BYQ28F, BYQ28EX series
4.6 max 2.9 max
Recesses (2x) 2.5 0.8 max. depth
2.8 6.4 15.8 19 max. max. seating plane 15.8 max
3 max. not tinned 3 2.5 13.5 min. 1 0.4
M
2
3 1.0 (2x) 0.6 2.54 0.5 2.5 1.3 0.9 0.7
5.08
Fig.13. SOT186A; The seating plane is electrically isolated from all terminals.
Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8".
October 1998
6
Rev 1.300
Philips Semiconductors
Product specification
Rectifier diodes ultrafast, rugged
DEFINITIONS
Data sheet status Objective specification Product specification Limiting values
BYQ28F, BYQ28EX series
This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. (c) Philips Electronics N.V. 1998 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
October 1998
7
Rev 1.300

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